Key Points
Researchers from IIT Guwahati, along with IIT Mandi and Institute of Sensor and Actuator Systems at Technical University Wien have developed a breakthrough technique for growing ultra-wide bandgap semiconductors, IIT Guwahati has said..
Named gallium oxide, this semiconductor has the potential to significantly improve the efficiency of power electronics used in high-power applications...
There is a considerable amount of research into improving the efficiency of power electronic systems by using materials like Gallium Nitride (GaN) and Silicon Carbide (SiC)..
The new research team has successfully developed superior-quality ultra-wide bandgap compound semiconductors by incorporating gallium oxide with tin..
The researchers hope that this breakthrough technology will pave the way for the development of more efficient and sustainable power electronics that can support a range of high-power applications...
